2SD1245 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High DC Current Gain : hFE= 500(Min) @IC= 2A. Minimum Lot-to-Lot variati.

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Datasheet Specifications

Part number: 2SD1245
Manufacturer: Inchange Semiconductor
File Size: 208.64 KB
Datasheet: 2SD1245-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipatio

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2SD1245 Silicon NPN Power Transistor Inchange Semiconductor

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