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2SD1245 - Silicon NPN Power Transistor

2SD1245 Description

isc Silicon NPN Darlington Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High DC Current Gain : hFE= 500(Min) @IC= 2A. Minimum Lot-to-Lot variati.

2SD1245 Applications

* Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipatio

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Datasheet Details

Part number
2SD1245
Manufacturer
Inchange Semiconductor
File Size
208.64 KB
Datasheet
2SD1245-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1245-like datasheet