2SD1245 Datasheet - Inchange Semiconductor

2SD1245, Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High DC Current Gain : hFE= 500(Min) @IC= 2A. Minimum Lot-to-Lot variati.

2SD1245-InchangeSemiconductor.pdf

2SD1245 Datasheet Preview — Preview of 2SD1245 PDF

Datasheet Details

Part number:

2SD1245

Manufacturer:

Inchange Semiconductor

File Size:

208.64 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipatio

2SD1245 Distributors

📁 Related Datasheet

2SD1241 2SD1242 2SD1243 2SD1244 2SD1246 2SD1247

📌 All Tags

2SD1245 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1245-like datasheet