* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB927/2SD1247] ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter
2SD1247
Sanyo Semicon Device
86.82 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Power suppli.
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