* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E
2SD1246
Sanyo Semicon Device
83.13 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:1030E
PNP/NPN Epitaxial Planar Silicon Transistors
2SB926/2SD1246
Large-Current Driving Applications
Applications
* Power suppli.
📁 Related Datasheet
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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.
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: hFE=.
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(Sanyo Semicon Device)
Ordering number:1029C
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Large-Current Driving Applications
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: .
