2SD1269 Silicon NPN Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1269 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Good Linearit.

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Datasheet Specifications

Part number: 2SD1269
Manufacturer: Inchange Semiconductor
File Size: 215.18 KB
Datasheet: 2SD1269-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Pow

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2SD1269 Silicon NPN Transistor Inchange Semiconductor

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