2SD1260A Datasheet - Panasonic Semiconductor

2SD1260A Silicon PNP Transistor

Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1260 and 2SD1260A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 4

2SD1260A Features

* 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB937 2SB937A 2SB937 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter

2SD1260A_PanasonicSemiconductor.pdf