2SD1266 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1266 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Good Linearit.

📥 Download Datasheet

2SD1266 Datasheet Preview — Preview of 2SD1266 PDF

Datasheet Specifications

Part number: 2SD1266
Manufacturer: INCHANGE
File Size: 212.08 KB
Datasheet: 2SD1266-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Powe

2SD1266 Distributors

📁 Related Datasheet

2SD1266A 2SD1260 2SD1260A 2SD1261 2SD1261A 2SD1262

📌 All Tags

2SD1266 NPN Transistor INCHANGE

INCHANGE 2SD1266-like datasheet