2SD1267 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1267 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Good Linearit.

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Datasheet Specifications

Part number: 2SD1267
Manufacturer: INCHANGE
File Size: 212.21 KB
Datasheet: 2SD1267-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Powe

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2SD1267 NPN Transistor INCHANGE

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