Datasheet4U Logo Datasheet4U.com

2SD1264 - NPN Transistor

📥 Download Datasheet

Preview of 2SD1264 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD1264
Manufacturer INCHANGE
File Size 211.04 KB
Description NPN Transistor
Datasheet download datasheet 2SD1264-INCHANGE.pdf

2SD1264 Product details

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) High Collector Power Dissipation Complement to Type 2SB940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications and TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC

📁 2SD1264 Similar Datasheet

  • 2SD1264A - Silicon NPN triple diffusion Transistor (Panasonic Semiconductor)
  • 2SD1260 - Silicon NPN triple diffusion Transistor (Panasonic Semiconductor)
  • 2SD1260A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1261 - Silicon NPN triple diffusion Transistor (Panasonic Semiconductor)
  • 2SD1261A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1262 - Silicon NPN triple diffusion Transistor (Panasonic Semiconductor)
  • 2SD1262A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1263 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE
Published: |