2SD1264 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min). High Collector Power Dissipation. Complement to Type 2SB940. Minimum Lot-t.

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Datasheet Specifications

Part number: 2SD1264
Manufacturer: INCHANGE
File Size: 211.04 KB
Datasheet: 2SD1264-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifications and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2

2SD1264 Distributors

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NPN Transistor INCHANGE

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