2SD1264 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min). High Collector Power Dissipation. Complement to Type 2SB940. Minimum Lot-t.

📥 Download Datasheet

2SD1264 Datasheet Preview — Preview of 2SD1264 PDF

Datasheet Specifications

Part number: 2SD1264
Manufacturer: INCHANGE
File Size: 211.04 KB
Datasheet: 2SD1264-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifications and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2

2SD1264 Distributors

📁 Related Datasheet

2SD1264A 2SD1260 2SD1260A 2SD1261 2SD1261A 2SD1262

📌 All Tags

2SD1264 NPN Transistor INCHANGE

INCHANGE 2SD1264-like datasheet