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2SD1223 - NPN Transistor

2SD1223 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1223 .
High DC Current Gain- : hFE = 2000(Min)@ IC= 4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

2SD1223 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB

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Datasheet Details

Part number
2SD1223
Manufacturer
INCHANGE
File Size
211.73 KB
Datasheet
2SD1223-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1223-like datasheet