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2SD1229 NPN Transistor

2SD1229 Description

isc Silicon NPN Darlington Power Transistor 2SD1229 .
High DC Current Gain : hFE= 2000(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min. Complement to Type.

2SD1229 Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector

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Datasheet Details

Part number
2SD1229
Manufacturer
INCHANGE
File Size
212.77 KB
Datasheet
2SD1229-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1229-like datasheet