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2SD1229

NPN Transistor

2SD1229 General Description

*High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= 2V *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) *Complement to Type 2SB912 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor drivers, printer h.

2SD1229 Datasheet (212.77 KB)

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Datasheet Details

Part number:

2SD1229

Manufacturer:

INCHANGE

File Size:

212.77 KB

Description:

Npn transistor.

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