2SD1455 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number: 2SD1455
Manufacturer: INCHANGE
File Size: 208.94 KB
Datasheet: 2SD1455-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temp

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2SD1455 NPN Transistor INCHANGE

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