2SD1457 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 700(Min. High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min). Minimum Lot-t.

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Datasheet Specifications

Part number: 2SD1457
Manufacturer: INCHANGE
File Size: 218.01 KB
Datasheet: 2SD1457-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power

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2SD1457 NPN Transistor INCHANGE

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