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2SD1457 NPN Transistor

2SD1457 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 700(Min. High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min). Minimum Lot-t.

2SD1457 Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power

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Datasheet Details

Part number
2SD1457
Manufacturer
INCHANGE
File Size
218.01 KB
Datasheet
2SD1457-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1457-like datasheet