2SD1499 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1499 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Wide Area of Safe Operation. Complement to Type 2SB1063. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SD1499
Manufacturer: INCHANGE
File Size: 211.48 KB
Datasheet: 2SD1499-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collec

2SD1499 Distributors

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2SD1499 NPN Transistor INCHANGE

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