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2SD1804L-T - NPN Transistor

2SD1804L-T Description

isc Silicon NPN Power Transistor .
Excellent linearity of hFE. Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V. Fast switching time. Minimum Lot-to-Lot variat.

2SD1804L-T Applications

* Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Cur

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Datasheet Details

Part number
2SD1804L-T
Manufacturer
INCHANGE
File Size
201.66 KB
Datasheet
2SD1804L-T-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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