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2SD1817 - NPN Transistor

2SD1817 Description

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 .
High DC current gain. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1.

2SD1817 Applications

* Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 80 V 60 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

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Datasheet Details

Part number
2SD1817
Manufacturer
INCHANGE
File Size
211.33 KB
Datasheet
2SD1817-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1817-like datasheet