2SD1817 NPN Transistor

INCHANGE

Description

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 .
High DC current gain. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 2SD1817
Manufacturer: INCHANGE
File Size: 211.33 KB
Datasheet: 2SD1817-INCHANGE.pdf
Description: NPN Transistor

Applications

* Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 80 V 60 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

2SD1817 Distributors

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2SD1817 NPN Transistor INCHANGE

INCHANGE 2SD1817-like datasheet