2SD1816L
Inchange
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Silicon npn power transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) *Collector Power Dissipation : PC= 2 W(Max) *Minimum Lot-to-Lot variatio
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2SD1816 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1816
DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating pact.
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Ordering number:EN2540A
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..
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* Low collector-to-emitter saturation .
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.
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(INCHANGE)
isc Silicon NPN Power Transistor
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z Low Collector-to-Em.
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(GME)
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NPN Epitaxial Planar Silicon Transistors
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Adoption of FBET,MBIT processes.
Pb
Large current capacity and wid.