Datasheet4U Logo Datasheet4U.com

2SD1816L - Silicon NPN Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD1816L

Datasheet Details

Part number 2SD1816L
Manufacturer Inchange
File Size 235.17 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1816L Datasheet
Additional preview pages of the 2SD1816L datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Collector Power Dissipation : PC= 2 W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collect

📁 Similar Datasheet

  • 2SD1816 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1812 - NPN Transistor (Rohm)
  • 2SD1815 - NPN Transistor (INCHANGE)
  • 2SD1817 - NPN Epitaxial Silicon Transistor (Sanyo Semicon Device)
  • 2SD1817R - NPN Silicon Transistor (SEMTECH)
  • 2SD1817Z - NPN Silicon Transistor (SEMTECH)
  • 2SD1818 - NPN SILICON POWER TRANSISTOR (NEC)
  • 2SD1819A - Silicon NPN epitaxial planer type Transistor (Panasonic Semiconductor)
Other Datasheets by Inchange
  • 2SD5702 - Silicon NPN Power Transistors
Published: |