2SD5702 Silicon NPN Power Transistors

Inchange

Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5702 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SD5702
Manufacturer: Inchange
File Size: 189.77 KB
Datasheet: 2SD5702_Inchange.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 6 A

2SD5702 Distributors

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2SD5702 Silicon NPN Power Transistors Inchange

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