2SD575
ETC
19.46kb
Triple diffused mesa type silicon transistor.
TAGS
📁 Related Datasheet
2SD570 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD570
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.) ·Low Collecto.
2SD5702 - Silicon NPN Power Transistors
(Inchange)
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5702
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·Hig.
2SD5703 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5703
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·Hig.
2SD571 - NPN Silicon Transistor
(NEC)
.
2SD577 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD577
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min) ·High Swi.
2SD5011 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5011
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·Hig.
2SD504 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD504
DESCRIPTION ·High DC current gain-
hFE = 750 (Min) @ IC = 6A ·Collector-.
2SD5041 - Transistors
(USHA)
Transistors 2SD5041
.
2SD506 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD506
DESCRIPTION ·High DC current gain-
hFE = 750 (Min) @ IC = 6A ·Collector-.
2SD5070 - Power Transistor
(Inchange Semiconductor)
..
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5070
DESCRIPTION ·High Breakdown Voltage.