2SD570 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD570 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min. Low Collector Saturation Voltage : VCE(sat)= 0. Minimum Lot-t.

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Datasheet Specifications

Part number: 2SD570
Manufacturer: INCHANGE
File Size: 213.54 KB
Datasheet: 2SD570-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak PC

2SD570 Distributors

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2SD570 NPN Transistor INCHANGE

INCHANGE 2SD570-like datasheet