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2SD570

NPN Transistor

2SD570 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.)
*Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for audio and general purpose applications. ABSOLUT.

2SD570 Datasheet (213.54 KB)

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Datasheet Details

Part number:

2SD570

Manufacturer:

INCHANGE

File Size:

213.54 KB

Description:

Npn transistor.

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2SD570 NPN Transistor INCHANGE

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