2SD570 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio and general purpose applications.
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