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2SD517 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits .

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD517 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=90℃ TJ Junction Temperature Tstg Storage Temperature 5 A 16 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.
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