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2SD506 NPN Transistor

2SD506 Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD506 .
High DC current gain- hFE = 750 (Min) @ IC = 6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min). Minimum Lot-to-Lot variation.

2SD506 Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1

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Datasheet Details

Part number
2SD506
Manufacturer
INCHANGE
File Size
179.65 KB
Datasheet
2SD506-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD506-like datasheet