2SD506 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD506 .
High DC current gain- hFE = 750 (Min) @ IC = 6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min). Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SD506
Manufacturer: INCHANGE
File Size: 179.65 KB
Datasheet: 2SD506-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1

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2SD506 NPN Transistor INCHANGE

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