2SD900 - NPN Transistor
*High Breakdown Voltage- : VCBO= 1500V (Min) *High Switching Speed *Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4.5A *Built-in Damper Diode *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in
