2SD904 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD904

Manufacturer:

INCHANGE

File Size:

202.29kb

Download:

📄 Datasheet

Description:

Npn transistor.

High Breakdown Voltage- : VCBO= 1500V (Min)

Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A

<

2SD904 Application

• Applications
• Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO

TAGS

2SD904

INCHANGE

📁 Related Datasheet

2SD90 - NPN Transistor (ETC)
.. .

2SD900 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low C.

2SD900B - Silicon NPN Transistor (ETC)
.

2SD905 - Silicon NPN Transistor (ETC)
.

2SD905 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 .. DESCRIPTION ·With TO-3 package ·High voltag.

2SD907 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD907 DESCRIPTION ·High Collector Current ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·M.

2SD909 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD909 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current .

2SD91 - NPN Transistor (ETC)
.. .

2SD911 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD911 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current .

2SD916 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot v.