2T837A PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). With TO-220 packaging. Minimum Lot-to-Lot variations for robust device perfor.

📥 Download Datasheet

2T837A Datasheet Preview — Preview of 2T837A PDF

Datasheet Specifications

Part number: 2T837A
Manufacturer: INCHANGE
File Size: 208.94 KB
Datasheet: 2T837A-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A PC Total Power D

2T837A Distributors

📁 Related Datasheet

2T837B 2T837E 2T837T 2T803A 2T808A 2T808A-2

📌 All Tags

2T837A PNP Transistor INCHANGE

INCHANGE 2T837A-like datasheet