2T837A PNP Transistor

INCHANGE

2T837A Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). With TO-220 packaging. Minimum Lot-to-Lot variations for robust device perfor.

2T837A Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A PC Total Power D

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Datasheet Details

Part number: 2T837A
Manufacturer: INCHANGE
File Size: 208.94 KB
Datasheet: 2T837A-INCHANGE.pdf
Description: PNP Transistor

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PNP Transistor INCHANGE

INCHANGE 2T837A-like datasheet