Datasheet4U Logo Datasheet4U.com

3DD103E Datasheet - INCHANGE

3DD103E NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) *DC Current Gain- : hFE= 10(Min.)@IC= 1.5A *Collector-Emitter Saturation Voltage- : VCE(sat)= 4V(Max)@ IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed f.

3DD103E Datasheet (198.34 KB)

Preview of 3DD103E PDF
3DD103E Datasheet Preview Page 2

Datasheet Details

Part number:

3DD103E

Manufacturer:

INCHANGE

File Size:

198.34 KB

Description:

Npn transistor.

📁 Related Datasheet

3DD10 NPN Silicon Low Frequency High Power Transistor (Shaanxi Qunli Electric)

3DD100 NPN Silicon Low Frequency High Power Transistor (Shaanxi Qunli Electric)

3DD100A NPN Transistor (INCHANGE)

3DD100B NPN Transistor (INCHANGE)

3DD100C NPN Transistor (INCHANGE)

3DD100D NPN Transistor (INCHANGE)

3DD100E NPN Transistor (INCHANGE)

3DD101 NPN Silicon Low Frequency High Power Transistor (Shaanxi Qunli Electric)

TAGS

3DD103E NPN Transistor INCHANGE

3DD103E Distributor