Datasheet Details
| Part number | 3DD103E |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 198.34 KB |
| Description | NPN Transistor |
| Datasheet |
 3DD103E-INCHANGE.pdf
|
| Part number | 3DD103E |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 198.34 KB |
| Description | NPN Transistor |
| Datasheet |
3DD103E-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) DC Current Gain- : hFE= 10(Min.)@IC= 1.5A Collector-Emitter Saturation Voltage- : VCE(sat)= 4V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC-DC converts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base
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