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3DD103E

NPN Transistor

3DD103E General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.)
*DC Current Gain- : hFE= 10(Min.)@IC= 1.5A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 4V(Max)@ IC= 3A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed f.

3DD103E Datasheet (198.34 KB)

Preview of 3DD103E PDF

Datasheet Details

Part number:

3DD103E

Manufacturer:

INCHANGE

File Size:

198.34 KB

Description:

Npn transistor.

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3DD103E NPN Transistor INCHANGE

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