3DD103E NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min. DC Current Gain- : hFE= 10(Min. Collector-Emitter Saturation Volt.

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Datasheet Specifications

Part number: 3DD103E
Manufacturer: INCHANGE
File Size: 198.34 KB
Datasheet: 3DD103E-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier , DC-DC converts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A PC Collector Power Dissipati

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3DD103E NPN Transistor INCHANGE

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