7N65 Datasheet - INCHANGE

7N65, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 7N65 *

Features

* Drain Current ID= 7A@ TC=25℃
* Drain Source Voltage : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @VGS = 10 V
* Avalanche Energy Specified
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* AP

Applications

* High speed switching applications in power supplies
* PWM motor controls
* High efficient DC to DC converters and bridge circuits.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID

7N65-INCHANGE.pdf