AOB266L Datasheet - INCHANGE

AOB266L, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOB266L *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 140 110 450 PD Total Dissipation @TC=25℃ 268 Tch Max.
Operating

AOB266L-INCHANGE.pdf