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AOB292L N-Channel MOSFET

AOB292L Description

isc N-Channel MOSFET Transistor AOB292L *.

AOB292L Features

* Drain Current
* ID= 105A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

AOB292L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 105 A IDM Drain Current-Single Pulsed 420 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOB292L
Manufacturer
INCHANGE
File Size
233.77 KB
Datasheet
AOB292L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOB292L-like datasheet