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AOT286L N-Channel MOSFET

AOT286L Description

isc N-Channel MOSFET Transistor *.

AOT286L Features

* Static drain-source on-resistance: RDS(on) ≤6mΩ
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

AOT286L Applications

* Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 70 IDM

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Datasheet Details

Part number
AOT286L
Manufacturer
INCHANGE
File Size
241.39 KB
Datasheet
AOT286L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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