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AOT210L - 30V N-Channel MOSFET

Datasheet Summary

Description

The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.

Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 105A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics.

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Datasheet Details

Part number AOT210L
Manufacturer Freescale
File Size 517.99 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet AOT210L Datasheet
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Full PDF Text Transcription

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AOT210L/AOB210L 30V N-Channel MOSFET General Description The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 105A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.
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