AOT15S60 - Power Transistor
TM The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can b
AOT15S60 Features
* VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.6µJ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT15S60/AOB15S60 Parameter Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive
