AOT15S65 - Power Transistor
The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can
AOT15S65 Features
* VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AOB15S65 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive a
