AOT12N50 - 12A N-Channel MOSFET
The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts ca
AOT12N50 Features
* VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.52Ω D G S C unless otherwise noted Absolute Maximum Ratings TA=25° AOT12N50/AOB12N50 Parameter Symbol Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanch
