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AOT14N50 - 14A N-Channel MOSFET

Datasheet Summary

Description

The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability these parts c

Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.38Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOT14N50/AOB14N50 Parameter Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose,.

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Datasheet Details

Part number AOT14N50
Manufacturer Freescale
File Size 450.82 KB
Description 14A N-Channel MOSFET
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AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.
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