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AOT10N65

N-Channel MOSFET

AOT10N65 Features

* Drain Current

* ID= 10A@ TC=25℃

* Drain Source Voltage- : VDSS= 650V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

AOT10N65 General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plus.

AOT10N65 Datasheet (256.20 KB)

Preview of AOT10N65 PDF

Datasheet Details

Part number:

AOT10N65

Manufacturer:

INCHANGE

File Size:

256.20 KB

Description:

N-channel mosfet.

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TAGS

AOT10N65 N-Channel MOSFET INCHANGE

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