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AOT11S60L

N-Channel MOSFET

AOT11S60L Features

* Drain Current

* ID= 11A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for us

AOT11S60L General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Plus.

AOT11S60L Datasheet (255.54 KB)

Preview of AOT11S60L PDF

Datasheet Details

Part number:

AOT11S60L

Manufacturer:

INCHANGE

File Size:

255.54 KB

Description:

N-channel mosfet.

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AOT11S60L N-Channel MOSFET INCHANGE

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