AOT10N60 - N-Channel MOSFET

INCHANGE

AOT10N60 Datasheet Preview — Preview of AOT10N60 PDF

Datasheet Details

Part number	AOT10N60
Manufacturer	INCHANGE
File Size	255.20 KB
Description	N-Channel MOSFET
Datasheet	AOT10N60-INCHANGE.pdf

AOT10N60 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 36 A PD Total Dissipation @TC=25℃ 250 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current.
ID=10A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 28, 2020 |