AOT11S65 Datasheet - INCHANGE

AOT11S65, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOT11S65

Features

* Drain Current
* ID=11A@ TC=25℃
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 198 W TJ Max.
Operating Junction Temperat

AOT11S65-INCHANGE.pdf