AOT11S65 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	AOT11S65
Manufacturer	INCHANGE
File Size	255.26 KB
Description	N-Channel MOSFET
Datasheet	AOT11S65 Datasheet
Additional preview pages of the AOT11S65 datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 198 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current.
ID=11A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 28, 2020 |