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AOT11S65

Power Transistor

AOT11S65 Features

* VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive

AOT11S65 General Description

The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be.

AOT11S65 Datasheet (597.17 KB)

Preview of AOT11S65 PDF

Datasheet Details

Part number:

AOT11S65

Manufacturer:

Freescale

File Size:

597.17 KB

Description:

Power transistor.

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AOT11S65 Power Transistor Freescale

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