AOT288L Datasheet - INCHANGE

AOT288L, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOT288L *

Features

* Drain Current
* ID= 46A@ TC=25℃
* Drain Source Voltage- : VDSS= 80V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable f

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation @TC=25℃ 93.5 W Tj Max.
Operating Junction Temperature

AOT288L-INCHANGE.pdf