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AOTF190A60L N-Channel MOSFET

AOTF190A60L Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF190A60L *.

AOTF190A60L Features

* With To-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

AOTF190A60L Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 10 12 80 PD Total Dissipation @TC=25℃ 32 Tch Max. Operating Ju

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Datasheet Details

Part number
AOTF190A60L
Manufacturer
INCHANGE
File Size
197.20 KB
Datasheet
AOTF190A60L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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