AOTF2916L Datasheet - INCHANGE

AOTF2916L, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOTF2916L *

Features

* Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 50 PD Total Dissipation @TC=25℃ 23.5 Tj Max.
Operating Junc

AOTF2916L-INCHANGE.pdf