AOW410 Datasheet - INCHANGE

AOW410, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOW410 *

Features

* Drain Current
* ID= 150A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 150 A IDM Drain Current-Single Pulsed 405 A PD Total Dissipation @TC=25℃ 333 W Tj Max.
Operating Junction Temperature

AOW410-INCHANGE.pdf