AOW66412 Datasheet - INCHANGE

AOW66412, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOW66412

Features

* Drain Current
* ID=120A@ TC=25℃
* Drain Source Voltage- : VDSS=40V(Min)
* Static Drain-Source On-Resistance : RDS(on) =1.9Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 600 A PD Total Dissipation @TC=25℃ 260 W TJ Max.
Operating Junction Tempera

AOW66412-INCHANGE.pdf