APT66F60L Datasheet - INCHANGE

APT66F60L, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Plused 245 A PD Total Dissipation @TC=25℃ 113

APT66F60L-INCHANGE.pdf