APT66M60B2 Datasheet - INCHANGE

APT66M60B2, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max)
* Fast Switching
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 66 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 1135 W TJ Max.
Operating Junction Tempera

APT66M60B2-INCHANGE.pdf