Datasheet4U Logo Datasheet4U.com

BD241 NPN Transistor

BD241 Description

isc Silicon NPN Power Transistor BD241/A/B/C .
DC Current Gain -hFE = 25(Min)@ IC= 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD2.

BD241 Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD241 55 BD241A 70 VCBO Collector-Base Voltage V BD241B 90 BD241C 115 BD241 45 VCEO Collector-Emitter Voltage BD241A 60 V BD241B 8

📥 Download Datasheet

Preview of BD241 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD241
Manufacturer
INCHANGE
File Size
207.69 KB
Datasheet
BD241-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BD241BFP - COMPLEMENTARY SILICON POWER TRANSISTORS (STMicroelectronics)
  • BD241D - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
  • BD241E - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
  • BD241F - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
  • BD240 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BD2400U510-1366 - Ultra Low Profile 1336 Balun (Yantel)
  • BD2400U520-1365 - Ultra Low Profile 1365 Balun (Yantel)
  • BD240A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BD241-like datasheet