BD539D Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BD539D

Manufacturer:

INCHANGE

File Size:

187.05kb

Download:

📄 Datasheet

Description:

Npn transistor. DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Co

Datasheet Preview: BD539D 📥 Download PDF (187.05kb)
Page 2 of BD539D

BD539D Application

  • Applications
  • Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU

TAGS

BD539D
NPN
Transistor
INCHANGE

📁 Related Datasheet

BD539 - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min).

BD539A - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD539B - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539B - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD539C - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539C - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD539D - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD530 - PNP SILICON AMPLIFIER TRANSISTORS (Motorola Inc)
.

Stock and price

Vishay Beyschlag
CAP ALUM 39000UF 20% 16V SNAP TH
DigiKey
MALIEYH07BD539D02K
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts