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BD539D NPN Transistor

BD539D Description

isc Silicon NPN Power Transistor BD539D .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Complement to Type BD540D.

BD539D Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Pow

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Datasheet Details

Part number
BD539D
Manufacturer
INCHANGE
File Size
187.05 KB
Datasheet
BD539D-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD539D-like datasheet