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BD539D

NPN Transistor

BD539D General Description


*DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*Complement to Type BD540D
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in medium power linear and swit.

BD539D Datasheet (187.05 KB)

Preview of BD539D PDF

Datasheet Details

Part number:

BD539D

Manufacturer:

INCHANGE

File Size:

187.05 KB

Description:

Npn transistor.

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BD539D NPN Transistor INCHANGE

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