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BD535 - NPN Transistor

BD535 Description

isc Silicon NPN Power Transistor BD535 .
DC Current Gain - : hFE = 40@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min). Complement to Type BD536. Minimu.

BD535 Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCES Collector-Emitter Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Conti

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Datasheet Details

Part number
BD535
Manufacturer
INCHANGE
File Size
186.86 KB
Datasheet
BD535-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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