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BD539

NPN Transistor

BD539 General Description


*DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
*Complement to Type BD540 APPLICATIONS
*Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.

BD539 Datasheet (186.03 KB)

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Datasheet Details

Part number:

BD539

Manufacturer:

INCHANGE

File Size:

186.03 KB

Description:

Npn transistor.

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BD539 NPN Transistor INCHANGE

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