BD539 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min). Complement to Type BD540 APPLIC.

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Datasheet Specifications

Part number: BD539
Manufacturer: INCHANGE
File Size: 186.03 KB
Datasheet: BD539-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power

BD539 Distributors

📁 Related Datasheet

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BD539 NPN Transistor INCHANGE

INCHANGE BD539-like datasheet